On December 6, 2011 Intel and Micron announced that they have started mass production of the world's first 20 nm, 128 Gb, multi-level cell flash memory storage device.?? This technology will enable a terabit (Tb) of data storage in a small package using just 8 semiconductor die (this is 128 GB since there are 8 ... Tom Coughlin 07 Dec, 2011
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Source: http://www.forbes.com/sites/tomcoughlin/2011/12/06/new-flash-memory-devices-will-lead-to-128-gb-consumer-products-and-more-flash-in-computer-systems-2/?feed=rss_home
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Source: http://www.forbes.com/sites/tomcoughlin/2011/12/06/new-flash-memory-devices-will-lead-to-128-gb-consumer-products-and-more-flash-in-computer-systems-2/?feed=rss_home
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Admin - Selasa, 06 Desember 2011
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